Work Out 3
(20)- 256GB SSD NVMe M.2 Gen 3 x4 Type 2280 Mushkin Tempest MKNSSDTS256GB-D8, Read 3100MB/s, Write 1400MB/s (solid state drive intern SSD/внутрений высокоскоростной накопитель SSD)256GB SSD NVMe M.2 Gen 3 x4 Type 2280 Mushkin Tempest MKNSSDTS256GB-D8, Read 3100MB/s, Write 1400MB/s (solid state drive intern SSD/внутрений высокоскоростной накопитель SSD)
- 512GB SSD NVMe M.2 Gen 3 x4 Type 2280 Mushkin Tempest MKNSSDTS512GB-D8, Read 3300MB/s, Write 2200MB/s (solid state drive intern SSD/внутрений высокоскоростной накопитель SSD)512GB SSD NVMe M.2 Gen 3 x4 Type 2280 Mushkin Tempest MKNSSDTS512GB-D8, Read 3300MB/s, Write 2200MB/s (solid state drive intern SSD/внутрений высокоскоростной накопитель SSD) Бренд MUSHKIN Модель MKNSSDTS512GB-D8 Форм-фактор накопителя M.2 2280 Память накопителя 512 ГБ Контроллер InnoGrit IG5216 Тип чипов 3D NAND Ско
- M.2 NVMe SSD 500GB Samsung SSD 980, PCIe3.0 x4 / NVMe1.4, M2 Type 2280 form factor, Seq. Read: 3100 MB/s, Seq. Write: 2600 MB/s, Max Random 4k: Read /Write: 400K/470K IOPS, Samsung Pablo Controller, 512MB LPDDR4, V-NAND 3-bit MLCM.2 NVMe SSD 500GB Samsung SSD 980, PCIe3.0 x4 / NVMe1.4, M2 Type 2280 form factor, Seq. Read: 3100 MB/s, Seq. Write: 2600 MB/s, Max Random 4k: Read /Write: 400K/470K IOPS, Samsung Pablo Controller, 512MB LPDDR4, V-NAND 3-bit MLC
- M.2 NVMe SSD 4.0TB Corsair MP600 Core XT, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads 5000 MB/s / Writes 4400 MB/s, Random Read / Write IOPS - 600K / 1000K, Phison PS5021-E21T, HMB 64MB, AES-256, TBW - 900 TB, 176L Micron 3M.2 NVMe SSD 4.0TB Corsair MP600 Core XT, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads 5000 MB/s / Writes 4400 MB/s, Random Read / Write IOPS - 600K / 1000K, Phison PS5021-E21T, HMB 64MB, AES-256, TBW - 900 TB, 176L Micron 3
- 2.5" SSD 512GB GOODRAM CX400 Gen.2, SATAIII, Sequential Reads: 550 MB/s, Sequential Writes: 500 MB/s, Maximum Random 4k: Read: 75,500 IOPS / Write: 76,800 IOPS, Thickness- 7mm, Controller Phison PS3111-S11, 3D NAND TLC2.5" SSD 512GB GOODRAM CX400 Gen.2, SATAIII, Sequential Reads: 550 MB/s, Sequential Writes: 500 MB/s, Maximum Random 4k: Read: 75,500 IOPS / Write: 76,800 IOPS, Thickness- 7mm, Controller Phison PS3111-S11, 3D NAND TLC Объем 512 ГБ Скорость чтения 550 МБ/с Скорость записи 500 МБ/с Энергопотребление В режиме чтения:
- M.2 SATA SSD 256GB Verbatim Vi560 S3, SATA 6Gb/s, M.2 Type 2280 form factor, Sequential Reads: 560 MB/s, Sequential Writes: 460 MB/s, Max Random 4k: Read: 102,000 IOPS / Write: 80,000 IOPS, Phison Controller, 3D NAND TLCM.2 SATA SSD 256GB Verbatim Vi560 S3, SATA 6Gb/s, M.2 Type 2280 form factor, Sequential Reads: 560 MB/s, Sequential Writes: 460 MB/s, Max Random 4k: Read: 102,000 IOPS / Write: 80,000 IOPS, Phison Controller, 3D NAND TLC Форм-фактор: M.2 2280 Основной интерфейс: интерфейс Serial ATA со скоростью передачи данных 6 Гб
- Fujitsu SSD SATA 6G 480GB Mixed-Use 3.5' H-P EPFujitsu SSD SATA 6G 480GB Mixed-Use 3.5' H-P EP Модель S26361-F5732-L480 Жесткий диск SATA 6 гбит / с, 480 ГБ 3,5 дюйма Тип диска SSD Форм-фактор диска 3,5" (LFF) Тип привода Внутренний Емкость накопителя 480 ГБ Интерфейс жесткого диска SATA
- .M.2 SATA SSD 256GB Transcend TS256GMTS430S.M.2 SATA SSD 256GB Transcend TS256GMTS430S [42mm, R/W:530/400MB/s, 45K/70K IOPS, SM2258, 3DTLC] Volum 256 GB Viteza de citire 500 MB / s (SATA 6 GB / s) Viteza de inregistrare 410 MB / s Consumul de energie 3,3V ± 5% Factorul de forma M.2 MTBF 1.500.000 h Interfata SATAIII Tipul de celule de memorie 3D NAND (TLC)
- M.2 NVMe SSD 500GB Samsung 980 , PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 3500 MB/s, Write: 2300 MB/s, Read /Write: 250,000/550,000 IOPS, Controller Samsung Phoenix, 3D TLC (V-NAND)M.2 NVMe SSD 500GB Samsung 980 , PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 3500 MB/s, Write: 2300 MB/s, Read /Write: 250,000/550,000 IOPS, Controller Samsung Phoenix, 3D TLC (V-NAND) форм-фактор: 2280, M емкость: 500 ГБ скорость чтения/записи: 3100 МБ/с / 2600 МБ/с интерфейс подключения: M.2, PCI-E 3.0 x4 тип флэш-п
- 2.5" SSD 960GB KIOXIA (Toshiba) Exceria, SATAIII, SeqReads: 555 MB/s, SeqWrites: 540 MB/s, Read / Write Speed: 81000 IOPS / 88000 IOPS, 7mm, Controller SMI SM2258XT, BiCS Flash TLC2.5" SSD 960GB KIOXIA (Toshiba) Exceria, SATAIII, SeqReads: 555 MB/s, SeqWrites: 540 MB/s, Read / Write Speed: 81000 IOPS / 88000 IOPS, 7mm, Controller SMI SM2258XT, BiCS Flash TLC Формфактор: 2.5 Объем SSD: 960 ГБ Скорость чтения: 555 МБ/с. Скорость записи: 540 МБ/с Тип ячеек памяти: TLC (3-bit) Интерфейс подключе
- M.2 NVMe SSD 1.0TB Samsung 980 , PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 3500 MB/s, Write: 2300 MB/s, Read /Write: 250,000/550,000 IOPS, Controller Samsung Phoenix, 3D TLC (V-NAND)M.2 NVMe SSD 1.0TB Samsung 980 , PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 3500 MB/s, Write: 2300 MB/s, Read /Write: 250,000/550,000 IOPS, Controller Samsung Phoenix, 3D TLC (V-NAND) форм-фактор: 2280, M емкость: 1000 ГБ скорость чтения/записи: 3500 МБ/с / 3000 МБ/с интерфейс подключения: M.2, PCI-E 3.0 x4 тип флэш-
- 2.5" SSD 480GB Kingston DC600M Data Center Enterprise, SATAIII, Mixed-Use, 24/7, Consistent latency and IOPS, Hardware-based PLP, AES 256-bit self-encrypting drive, Seq Reads/Writes :560 MB/s / 470 MB/s, Steady-state 4k Read: 94,000 IOPS / Write: 41,0002.5" SSD 480GB Kingston DC600M Data Center Enterprise, SATAIII, Mixed-Use, 24/7, Consistent latency and IOPS, Hardware-based PLP, AES 256-bit self-encrypting drive, Seq Reads/Writes :560 MB/s / 470 MB/s, Steady-state 4k Read: 94,000 IOPS / Write: 41,000 Формфактор: 2.5 Объем SSD: 480 ГБ Скорость чтения: 560 МБ/с Ск
- M.2 NVMe SSD 2.0TB Verbatim Vi3000, Interface: PCIe3.0 x4 / NVMe 1.3, M2 Type 2280 form factor, Sequential Read 3300 MB/s, Sequential Write 3300 MB/s, Random Read 150K IOPS, Random Write 100K IOPS, Phison E13T, TBW: 1500TB, 3D NAND TLCM.2 NVMe SSD 2.0TB Verbatim Vi3000, Interface: PCIe3.0 x4 / NVMe 1.3, M2 Type 2280 form factor, Sequential Read 3300 MB/s, Sequential Write 3300 MB/s, Random Read 150K IOPS, Random Write 100K IOPS, Phison E13T, TBW: 1500TB, 3D NAND TLC Общий объем памяти 2 ТБ Количество бит на ячейку 3 бит TLC Структура памяти 3D NAN
- M.2 NVMe SSD 2.0TB Verbatim Vi7000G w/Heatsink, Interface: PCIe4.0 x4 / NVMe 1.4, M2 Type 2280 form factor, Sequential Read 7400 MB/s, Sequential Write 6700 MB/s, Random Read 600K IOPS, Random Write 1000K IOPS, DRAM Buffer, TBW: 700TB, PS5 Compatibile, 3DM.2 NVMe SSD 2.0TB Verbatim Vi7000G w/Heatsink, Interface: PCIe4.0 x4 / NVMe 1.4, M2 Type 2280 form factor, Sequential Read 7400 MB/s, Sequential Write 6700 MB/s, Random Read 600K IOPS, Random Write 1000K IOPS, DRAM Buffer, TBW: 700TB, PS5 Compatibile, 3D Бренд Verbatim Объем памяти, ГБ 2000 Назначение PS5,моноблок,н
- .M.2 NVMe SSD 2.0TB Samsung 970 EVO Plus [PCIe 3.0 x4, R/W:3500/3300MB/s, 620/560K IOPS, Phx, TLC ].M.2 NVMe SSD 2.0TB Samsung 970 EVO Plus [PCIe 3.0 x4, R/W:3500/3300MB/s, 620/560K IOPS, Phx, TLC] Capacitate stocare: 2000 GB Sistem de stocare a datelor: M.2 2280 Interfa?a SSD: NVMe PCIe 3.0 x4 Tip de memorie flash: TLC (Tri-Level Cell) Формфактор: M.2 Объем SSD: 2000 ГБ Скорость чтения: 3500 МБ/с Скорость
- M.2 NVMe SSD 1.0TB Corsair MP700, Interface: PCIe5.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads 9500 MB/s / Writes 8500 MB/s, Random Read / Write IOPS - 1300K / 1600K, Phison E26, 2GB DRAM, AES 256-bit, SLC Write Cache, TBW-700 TB, 232L MicrM.2 NVMe SSD 1.0TB Corsair MP700, Interface: PCIe5.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads 9500 MB/s / Writes 8500 MB/s, Random Read / Write IOPS - 1300K / 1600K, Phison E26, 2GB DRAM, AES 256-bit, SLC Write Cache, TBW-700 TB, 232L Micr Формфактор: M.2 Объем SSD: 1000 ГБ Скорость чтения: 9500 МБ/с
- M.2 NVMe SSD 4.0TB Kingston KC3000, w/HeatSpreader, PCIe4.0 x4 / NVMe, M2 Type 2280 form factor, Sequential Reads 7000 MB/s, Sequential Writes 7000 MB/s, Max Random 4k Read 1000,000 / Write 1000,000 IOPS, Phison E18 controller, TBW=3.2PBW, 3D NAND TLCM.2 NVMe SSD 4.0TB Kingston KC3000, w/HeatSpreader, PCIe4.0 x4 / NVMe, M2 Type 2280 form factor, Sequential Reads 7000 MB/s, Sequential Writes 7000 MB/s, Max Random 4k Read 1000,000 / Write 1000,000 IOPS, Phison E18 controller, TBW=3.2PBW, 3D NAND TLC Формфактор: M.2 Объем SSD: 4000 ГБ Скорость чтения: 7000 МБ/с Скор
- M.2 NVMe SSD 4.0TB Kingston Fury Renegade, w/HeatSpreader, PCIe4.0 x4 / NVMe, M2 Type 2280 form factor, Sequential Reads 7300 MB/s, Sequential Writes 7000 MB/s, Max Random 4k Read 1,000,000 / Write 1,000,000 IOPS, Phison E18 controller, 4000TBW, 3D NAND TM.2 NVMe SSD 4.0TB Kingston Fury Renegade, w/HeatSpreader, PCIe4.0 x4 / NVMe, M2 Type 2280 form factor, Sequential Reads 7300 MB/s, Sequential Writes 7000 MB/s, Max Random 4k Read 1,000,000 / Write 1,000,000 IOPS, Phison E18 controller, 4000TBW, 3D NAND T Формфактор: M.2 Объем SSD: 4000 ГБ Скорость чтения: 7300 МБ/с
- 2.5" SATA SSD 8.0TB Samsung 870 QVO MZ-77Q8T0BW [R/W:560/530MB/s, 98/88K IOPS, MJX, 4bit MLC] 2.5" SATA SSD 8.0TB Samsung 870 QVO MZ-77Q8T0BW [R/W:560/530MB/s, 98/88K IOPS, MJX, 4bit MLC] Емкость накопителя 8 ТБ Тип памяти VNAND Материал корпуса Металл Форм-фактор 2,5" Интерфейс SATA 3 Максимальная скорость чтения 560 Мб/сек
![.M.2 SSD 120GB Transcend "TS120GMTS820" [80mm, R/W:550/420MB/s, 78K/78K IOPS, SM2256KAB, TLC]](/img/1782307.jpg)
![.M.2 NVMe SSD 2.0TB Samsung 970 EVO Plus [PCIe 3.0 x4, R/W:3500/3300MB/s, 620/560K IOPS, Phx, TLC ]](/img/2100775.jpg)
![2.5" SATA SSD 8.0TB Samsung 870 QVO MZ-77Q8T0BW [R/W:560/530MB/s, 98/88K IOPS, MJX, 4bit MLC]](/img/1989244.jpg)
