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667.00 MDL
M.2 NVMe SSD 256GB GOODRAM PX500 Gen2, Interface: PCIe3.0 x4 / NVMe1.3, M2 Type 2280 form factor, Sequential Reads/Writes 1850 MB/s/ 950 MB/s, Random (4k QD64) Read/Write 102K IOPS/ 230K IOPS, SMI 2263XT, TBW: 70TB, 3D NAND TLC, heat-dissipating thermal pM.2 NVMe SSD 256GB GOODRAM PX500 Gen2, Interface: PCIe3.0 x4 / NVMe1.3, M2 Type 2280 form factor, Sequential Reads/Writes 1850 MB/s/ 950 MB/s, Random (4k QD64) Read/Write 102K IOPS/ 230K IOPS, SMI 2263XT, TBW: 70TB, 3D NAND TLC, heat-dissipating thermal Бренд GOODRAM Модель PX500 Форм-фактор накопителя M.2 NVMe Памя
692.00 MDL
M.2 SATA SSD 256GB Verbatim Vi560 S3, SATA 6Gb/s, M.2 Type 2280 form factor, Sequential Reads: 560 MB/s, Sequential Writes: 460 MB/s, Max Random 4k: Read: 102,000 IOPS / Write: 80,000 IOPS, Phison Controller, 3D NAND TLCM.2 SATA SSD 256GB Verbatim Vi560 S3, SATA 6Gb/s, M.2 Type 2280 form factor, Sequential Reads: 560 MB/s, Sequential Writes: 460 MB/s, Max Random 4k: Read: 102,000 IOPS / Write: 80,000 IOPS, Phison Controller, 3D NAND TLC Форм-фактор: M.2 2280 Основной интерфейс: интерфейс Serial ATA со скоростью передачи данных 6 Гб
766.00 MDL
M.2 NVMe SSD 250GB GOODRAM PX600 Gen2, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads/Writes 3200 MB/s / 1700 MB/s, TBW: 100TB, MTBF: 2mln hours, 3D NAND TLC, heat-dissipating thermal padM.2 NVMe SSD 250GB GOODRAM PX600 Gen2, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads/Writes 3200 MB/s / 1700 MB/s, TBW: 100TB, MTBF: 2mln hours, 3D NAND TLC, heat-dissipating thermal pad Объём накопителя: 250 ГБ Тип ячеек памяти 3D NAND TLC Максимальная скорость записи, мб/с 1700 Мак
840.00 MDL
M.2 NVMe SSD 250GB Kingston NV2, Interface: PCIe4.0 x4 / NVMe1.3, M2 Type 2280 form factor, Sequential Reads 3000 MB/s, Sequential Writes 1300 MB/s, Phison E19T controller, TBW: 80TB, 3D QLC NAND flashM.2 NVMe SSD 250GB Kingston NV2, Interface: PCIe4.0 x4 / NVMe1.3, M2 Type 2280 form factor, Sequential Reads 3000 MB/s, Sequential Writes 1300 MB/s, Phison E19T controller, TBW: 80TB, 3D QLC NAND flash Объём накопителя 250 ГБ Тип ячеек памяти QLC 3D NAND Максимальная скорость записи, мб/с 1300 Максимальная скорос
914.00 MDL
M.2 NVMe SSD 250GB Patriot P400 Lite, w/Graphene Heatshield, Interface: PCIe4.0 x4 / NVMe 1.4, M2 Type 2280 form factor, Sequential Read 3200 MB/s, Sequential Write 1300 MB/s, Random Read 110K IOPS, Random Write 300K IOPS, EtE data path protection, TBW: 1M.2 NVMe SSD 250GB Patriot P400 Lite, w/Graphene Heatshield, Interface: PCIe4.0 x4 / NVMe 1.4, M2 Type 2280 form factor, Sequential Read 3200 MB/s, Sequential Write 1300 MB/s, Random Read 110K IOPS, Random Write 300K IOPS, EtE data path protection Объём накопителя: 250 ГБ Тип ячеек памяти 3D NAND TLC Максимальная
1112.00 MDL
M.2 SATA SSD 512GB Verbatim Vi560 S3, SATA 6Gb/s, M.2 Type 2280 form factor, Sequential Reads: 560 MB/s, Sequential Writes: 520 MB/s, Max Random 4k: Read: 101,376 IOPS / Write: 80,400 IOPS, Phison Controller, 3D NAND TLCM.2 SATA SSD 512GB Verbatim Vi560 S3, SATA 6Gb/s, M.2 Type 2280 form factor, Sequential Reads: 560 MB/s, Sequential Writes: 520 MB/s, Max Random 4k: Read: 101,376 IOPS / Write: 80,400 IOPS, Phison Controller, 3D NAND TLC Объём накопителя 512 ГБ Тип ячеек памяти 3D NAND TLC
1137.00 MDL
M.2 NVMe SSD 512GB GOODRAM PX500 Gen2, Interface: PCIe3.0 x4 / NVMe1.3, M2 Type 2280 form factor, Sequential Reads/Writes 2000 MB/s/ 1600 MB/s, Random (4k QD64) Read/Write 173K IOPS/ 140K IOPS, SMI 2263XT, TBW: 330TB, 3D NAND TLC, heat-dissipating thermalM.2 NVMe SSD 512GB GOODRAM PX500 Gen2, Interface: PCIe3.0 x4 / NVMe1.3, M2 Type 2280 form factor, Sequential Reads/Writes 2000 MB/s/ 1600 MB/s, Random (4k QD64) Read/Write 173K IOPS/ 140K IOPS, SMI 2263XT, TBW: 330TB, 3D NAND TLC, heat-dissipating thermal Тип устройства:SSD Тип устройства:SSD Производитель:GOODRAM Мо
1161.00 MDL
M.2 NVMe SSD 500GB Silicon Power UD85, Interface:PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads 3600 MB/s / Writes 2400 MB/s, MTBF 1.5mln, HMB, ECC, SLC Cache, E2E Data Protection, LDPC, Phison E21T, 3D NAND TLCM.2 NVMe SSD 500GB Silicon Power UD85, Interface:PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads 3600 MB/s / Writes 2400 MB/s, MTBF 1.5mln, HMB, ECC, SLC Cache, E2E Data Protection, LDPC, Phison E21T, 3D NAND TLC Бренд SILICON POWER Модель UD85 Форм-фактор накопителя M.2 NVMe Память накопителя 500 ГБ
1161.00 MDL
M.2 NVMe SSD 500GB Kingston NV2, Interface: PCIe4.0 x4 / NVMe1.3, M2 Type 2280 form factor, Sequential Reads 3500 MB/s, Sequential Writes 2100 MB/s, Phison E19T controller, TBW: 160TB, 3D QLC NAND flashM.2 NVMe SSD 500GB Kingston NV2, Interface: PCIe4.0 x4 / NVMe1.3, M2 Type 2280 form factor, Sequential Reads 3500 MB/s, Sequential Writes 2100 MB/s, Phison E19T controller, TBW: 160TB, 3D QLC NAND flash Объём накопителя 500 ГБ Тип ячеек памяти QLC 3D NAND Максимальная скорость записи, мб/с 2100 Максимальная скоро
1186.00 MDL
M.2 NVMe SSD 500GB GOODRAM PX600 Gen2, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads/Writes 4700 MB/s / 1700 MB/s, TBW: 160TB, MTBF: 2mln hours, 3D NAND TLC, heat-dissipating thermal padM.2 NVMe SSD 500GB GOODRAM PX600 Gen2, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads/Writes 4700 MB/s / 1700 MB/s, TBW: 160TB, MTBF: 2mln hours, 3D NAND TLC, heat-dissipating thermal pad Объём накопителя: 500 ГБ Тип ячеек памяти 3D NAND TLC Максимальная скорость записи, мб/с 1700 Мак
1192.00 MDL
M.2 NVMe SSD 500GB Patriot P400 Lite, w/Graphene Heatshield, Interface: PCIe4.0 x4 / NVMe 1.4, M2 Type 2280 form factor, Sequential Read 3500 MB/s, Sequential Write 2400 MB/s, Random Read 220K IOPS, Random Write 500K IOPS, EtE data path protection, TBW: 2M.2 NVMe SSD 500GB Patriot P400 Lite, w/Graphene Heatshield, Interface: PCIe4.0 x4 / NVMe 1.4, M2 Type 2280 form factor, Sequential Read 3500 MB/s, Sequential Write 2400 MB/s, Random Read 220K IOPS, Random Write 500K IOPS, EtE data path protection, TBW: 2 Объём накопителя 500 ГБ Тип ячеек памяти 3D NAND TLC Максималь
1213.00 MDL
M.2 NVMe SSD 500GB Corsair MP600 GS, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads 4800 MB/s / Writes 3500 MB/s, Random Read / Write IOPS - 450K / 700K, Phison PS2021-E21T, AES-256 encryption, TBW - 300 TB, 176L Micron 3D TLCM.2 NVMe SSD 500GB Corsair MP600 GS, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads 4800 MB/s / Writes 3500 MB/s, Random Read / Write IOPS - 450K / 700K, Phison PS2021-E21T, AES-256 encryption, TBW - 300 TB, 176L Micron 3D TLC
1554.00 MDL
M.2 NVMe SSD 500GB Samsung SSD 980, PCIe3.0 x4 / NVMe1.4, M2 Type 2280 form factor, Seq. Read: 3100 MB/s, Seq. Write: 2600 MB/s, Max Random 4k: Read /Write: 400K/470K IOPS, Samsung Pablo Controller, 512MB LPDDR4, V-NAND 3-bit MLCM.2 NVMe SSD 500GB Samsung SSD 980, PCIe3.0 x4 / NVMe1.4, M2 Type 2280 form factor, Seq. Read: 3100 MB/s, Seq. Write: 2600 MB/s, Max Random 4k: Read /Write: 400K/470K IOPS, Samsung Pablo Controller, 512MB LPDDR4, V-NAND 3-bit MLC
1682.00 MDL
M.2 NVMe SSD 500GB Corsair MP600 PRO NH, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads 6600 MB/s / Writes 3600 MB/s, Random Read / Write IOPS - 450K / 880K, Phison PS5018-E18, 512MB DDR4 DRAM, AES 256-bit Encryption, SSD SmarM.2 NVMe SSD 500GB Corsair MP600 PRO NH, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads 6600 MB/s / Writes 3600 MB/s, Random Read / Write IOPS - 450K / 880K, Phison PS5018-E18, 512MB DDR4 DRAM, AES 256-bit Encryption, SSD Smar
1745.00 MDL
M.2 NVMe SSD 500GB Kingston KC3000, w/HeatSpreader, PCIe4.0 x4 / NVMe, M2 Type 2280 form factor, Sequential Reads 7000 MB/s, Sequential Writes 3900 MB/s, Max Random 4k Read 450,000 / Write 900,000 IOPS, Phison E18 controller, 400TBW, 3D NAND TLCM.2 NVMe SSD 500GB Kingston KC3000, w/HeatSpreader, PCIe4.0 x4 / NVMe, M2 Type 2280 form factor, Sequential Reads 7000 MB/s, Sequential Writes 3900 MB/s, Max Random 4k Read 450,000 / Write 900,000 IOPS, Phison E18 controller, 400TBW, 3D NAND TLC Объем 500GB Форм-фактор M.2 Интерфейс подключения PCI Express 4.0 x4
1767.00 MDL
M.2 NVMe SSD 500GB Corsair MP600 PRO LPX, w/Heatsink, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads 7100 MB/s / Writes 3700 MB/s, Random Read / Write IOPS - 435K / 615K, Phison PS5018-E18, 512MB DRAM, AES 256-bit Encryption, M.2 NVMe SSD 500GB Corsair MP600 PRO LPX, w/Heatsink, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads 7100 MB/s / Writes 3700 MB/s, Random Read / Write IOPS - 435K / 615K, Phison PS5018-E18, 512MB DRAM, AES 256-bit Encryption,
1837.00 MDL
M.2 NVMe SSD 500GB Kingston Fury Renegade, w/HeatSpreader, PCIe4.0 x4 / NVMe, M2 Type 2280 form factor, Sequential Reads 7300 MB/s, Sequential Writes 3900 MB/s, Max Random 4k Read 450,000 / Write 900,000 IOPS, Phison E18 controller, 500TBW, 3D NAND TLCM.2 NVMe SSD 500GB Kingston Fury Renegade, w/HeatSpreader, PCIe4.0 x4 / NVMe, M2 Type 2280 form factor, Sequential Reads 7300 MB/s, Sequential Writes 3900 MB/s, Max Random 4k Read 450,000 / Write 900,000 IOPS, Phison E18 controller, 500TBW, 3D NAND TLC Объем: 500 ГБ Форм-фактор: M.2 Интерфейс подключения: PCI Express
2107.00 MDL
M.2 NVMe SSD 1.0TB GOODRAM PX600 Gen2, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads/Writes 5000 MB/s / 3200 MB/s, TBW: 300TB, MTBF: 2mln hours, 3D NAND TLC, heat-dissipating thermal padM.2 NVMe SSD 1.0TB GOODRAM PX600 Gen2, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads/Writes 5000 MB/s / 3200 MB/s, TBW: 300TB, MTBF: 2mln hours, 3D NAND TLC, heat-dissipating thermal pad Объём накопителя: 1000 ГБ Тип ячеек памяти 3D NAND TLC Максимальная скорость записи, мб/с 3200 Ма
2192.00 MDL
M.2 NVMe SSD 500GB Kingston Fury Renegade, w/Aluminum Heatsink, PCIe4.0 x4 / NVMe, M2 Type 2280 form factor, Sequential Reads 7300 MB/s, Sequential Writes 3900 MB/s, Max Random 4k Read 450,000 / Write 900,000 IOPS, Phison E18 controller, 500TBW, 3D NAND TM.2 NVMe SSD 500GB Kingston Fury Renegade, w/Aluminum Heatsink, PCIe4.0 x4 / NVMe, M2 Type 2280 form factor, Sequential Reads 7300 MB/s, Sequential Writes 3900 MB/s, Max Random 4k Read 450,000 / Write 900,000 IOPS, Phison E18 controller, 500TBW, 3D NAND T Объём накопителя 500 ГБ Тип ячеек памяти 3D NAND TLC Максим
2420.00 MDL
M.2 NVMe SSD 1.0TB GOODRAM IRDM PRO SLIM, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads/Writes 7000 MB/s / 5500 MB/s, Random 4K Reads/Writes: 350K IOPS / 700K IOPS, TBW: 700TB, MTBF: 2mln hours, Phison E18 with DRAM Buffer, PM.2 NVMe SSD 1.0TB GOODRAM IRDM PRO SLIM, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads/Writes 7000 MB/s / 5500 MB/s, Random 4K Reads/Writes: 350K IOPS / 700K IOPS, TBW: 700TB, MTBF: 2mln hours, Phison E18 with DRAM Buffer Объём накопителя: 1000 ГБ Тип ячеек памяти 3D NAND TLC Максима
2600.00 MDL
M.2 NVMe SSD 1.0TB Kingston KC3000, w/HeatSpreader, PCIe4.0 x4 / NVMe, M2 Type 2280 form factor, Sequential Reads 7000 MB/s, Sequential Writes 6000 MB/s, Max Random 4k Read 900,000 / Write 1000,000 IOPS, Phison E18 controller, 800TBW, 3D NAND TLCM.2 NVMe SSD 1.0TB Kingston KC3000, w/HeatSpreader, PCIe4.0 x4 / NVMe, M2 Type 2280 form factor, Sequential Reads 7000 MB/s, Sequential Writes 6000 MB/s, Max Random 4k Read 900,000 / Write 1000,000 IOPS, Phison E18 controller, 800TBW, 3D NAND TLC Объем 1 ТБ Форм-фактор M.2 Интерфейс подключения PCI Express 4.0 x4
2989.00 MDL
M.2 NVMe SSD 1.0TB Kingston Fury Renegade, w/HeatSpreader, PCIe4.0 x4 / NVMe, M2 Type 2280 form factor, Sequential Reads 7300 MB/s, Sequential Writes 6000 MB/s, Max Random 4k Read 900,000 / Write 1000,000 IOPS, Phison E18 controller, 1000TBW, 3D NAND TLCM.2 NVMe SSD 1.0TB Kingston Fury Renegade, w/HeatSpreader, PCIe4.0 x4 / NVMe, M2 Type 2280 form factor, Sequential Reads 7300 MB/s, Sequential Writes 6000 MB/s, Max Random 4k Read 900,000 / Write 1000,000 IOPS, Phison E18 controller, 1000TBW, 3D NAND TLC Название Накопитель SSD 1.0TB Kingston Fury Renegade M.2 2280 P
3233.00 MDL
M.2 NVMe SSD 2.0TB Verbatim Vi3000, Interface: PCIe3.0 x4 / NVMe 1.3, M2 Type 2280 form factor, Sequential Read 3300 MB/s, Sequential Write 3300 MB/s, Random Read 150K IOPS, Random Write 100K IOPS, Phison E13T, TBW: 1500TB, 3D NAND TLCM.2 NVMe SSD 2.0TB Verbatim Vi3000, Interface: PCIe3.0 x4 / NVMe 1.3, M2 Type 2280 form factor, Sequential Read 3300 MB/s, Sequential Write 3300 MB/s, Random Read 150K IOPS, Random Write 100K IOPS, Phison E13T, TBW: 1500TB, 3D NAND TLC Общий объем памяти 2 ТБ Количество бит на ячейку 3 бит TLC Структура памяти 3D NAN
3233.00 MDL
M.2 NVMe SSD 1.0TB Kingston Fury Renegade, w/Aluminum Heatsink, PCIe4.0 x4 / NVMe, M2 Type 2280 form factor, Sequential Reads 7300 MB/s, Sequential Writes 6000 MB/s, Max Random 4k Read 900,000 / Write 1000,000 IOPS, Phison E18 controller, 1000TBW, 3D NANDM.2 NVMe SSD 1.0TB Kingston Fury Renegade, w/Aluminum Heatsink, PCIe4.0 x4 / NVMe, M2 Type 2280 form factor, Sequential Reads 7300 MB/s, Sequential Writes 6000 MB/s, Max Random 4k Read 900,000 / Write 1000,000 IOPS, Phison E18 controller, 1000TBW, 3D NAND Объём накопителя 1.0TB Тип ячеек памяти 3D NAND TLC
3233.00 MDL
M.2 NVMe SSD 2.0TB GOODRAM PX600 Gen2, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads/Writes 5000 MB/s / 4200 MB/s, TBW: 600TB, MTBF: 2mln hours, 3D NAND TLC, heat-dissipating thermal padM.2 NVMe SSD 2.0TB GOODRAM PX600 Gen2, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads/Writes 5000 MB/s / 4200 MB/s, TBW: 600TB, MTBF: 2mln hours, 3D NAND TLC, heat-dissipating thermal pad Объём накопителя: 2000 ГБ Тип ячеек памяти 3D NAND TLC Максимальная скорость записи, мб/с 4200 Ма
3396.00 MDL
M.2 NVMe SSD 2.0TB Kingston NV2, Interface: PCIe4.0 x4 / NVMe1.3, M2 Type 2280 form factor, Sequential Reads 3500 MB/s, Sequential Writes 2800 MB/s, Phison E19T controller, TBW: 640TB, 3D QLC NAND flashM.2 NVMe SSD 2.0TB Kingston NV2, Interface: PCIe4.0 x4 / NVMe1.3, M2 Type 2280 form factor, Sequential Reads 3500 MB/s, Sequential Writes 2800 MB/s, Phison E19T controller, TBW: 640TB, 3D QLC NAND flash Объём накопителя 2000 ГБ Тип ячеек памяти QLC 3D NAND Максимальная скорость записи, мб/с 2800 Максимальная скор
3528.00 MDL
1.0TB (USB3.2/Type-C) Samsung Portable SSD T7 Touch, FP ID, Silver (85x57x8mm, 58g, R/W:1050MB/s) 1.0TB (USB3.2/Type-C) Samsung Portable SSD T7 Touch, FP ID, Silver (85x57x8mm, 58g, R/W:1050MB/s) Объём накопителя, ГБ 1000 Максимальная скорость записи, Мбайт/с 1000 Максимальная скорость чтения, Мбайт/с 1050
3528.00 MDL
1.0TB (USB3.2/Type-C) Samsung Portable SSD T7 Touch, FP ID, Black (85x57x8mm, 58g, R/W:1050MB/s) 1.0TB (USB3.2/Type-C) Samsung Portable SSD T7 Touch, FP ID, Black (85x57x8mm, 58g, R/W:1050MB/s) Бренд SAMSUNG Модель Portable SSD T7 Touch Black Форм-фактор накопителя Портативный Память накопителя 1.0 ТБ Размеры 85 x 57 x 8 мм Скорость чтения 1050 МБ/с Тип накопителя SSD Интерфейсы USB3.2/Type-C Вес 58г
3640.00 MDL
M.2 NVMe SSD 2.0TB Patriot P400 Lite, w/Graphene Heatshield, Interface: PCIe4.0 x4 / NVMe 1.4, M2 Type 2280 form factor, Sequential Read 3300 MB/s, Sequential Write 2700 MB/s, Random Read 380K IOPS, Random Write 540K IOPS, EtE data path protection, TBW: 1M.2 NVMe SSD 2.0TB Patriot P400 Lite, w/Graphene Heatshield, Interface: PCIe4.0 x4 / NVMe 1.4, M2 Type 2280 form factor, Sequential Read 3300 MB/s, Sequential Write 2700 MB/s, Random Read 380K IOPS, Random Write 540K IOPS, EtE data path protection, TBW: 1 Объём накопителя 2000 ГБ Тип ячеек памяти 3D NAND TLC Макси
4046.00 MDL
M.2 NVMe SSD 2.0TB Verbatim Vi7000G w/Heatsink, Interface: PCIe4.0 x4 / NVMe 1.4, M2 Type 2280 form factor, Sequential Read 7400 MB/s, Sequential Write 6700 MB/s, Random Read 600K IOPS, Random Write 1000K IOPS, DRAM Buffer, TBW: 700TB, PS5 Compatibile, 3DM.2 NVMe SSD 2.0TB Verbatim Vi7000G w/Heatsink, Interface: PCIe4.0 x4 / NVMe 1.4, M2 Type 2280 form factor, Sequential Read 7400 MB/s, Sequential Write 6700 MB/s, Random Read 600K IOPS, Random Write 1000K IOPS, DRAM Buffer, TBW: 700TB, PS5 Compatibile, 3D Бренд Verbatim Объем памяти, ГБ 2000 Назначение PS5,моноблок,н

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