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(4)- M.2 NVMe SSD 250GB GOODRAM PX600 Gen2, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads/Writes 3200 MB/s / 1700 MB/s, TBW: 100TB, MTBF: 2mln hours, 3D NAND TLC, heat-dissipating thermal padM.2 NVMe SSD 250GB GOODRAM PX600 Gen2, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads/Writes 3200 MB/s / 1700 MB/s, TBW: 100TB, MTBF: 2mln hours, 3D NAND TLC, heat-dissipating thermal pad Объём накопителя: 250 ГБ Тип ячеек памяти 3D NAND TLC Максимальная скорость записи, мб/с 1700 Мак
- M.2 NVMe SSD 500GB GOODRAM PX600 Gen2, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads/Writes 4700 MB/s / 1700 MB/s, TBW: 160TB, MTBF: 2mln hours, 3D NAND TLC, heat-dissipating thermal padM.2 NVMe SSD 500GB GOODRAM PX600 Gen2, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads/Writes 4700 MB/s / 1700 MB/s, TBW: 160TB, MTBF: 2mln hours, 3D NAND TLC, heat-dissipating thermal pad Объём накопителя: 500 ГБ Тип ячеек памяти 3D NAND TLC Максимальная скорость записи, мб/с 1700 Мак
- M.2 NVMe SSD 1.0TB GOODRAM PX600 Gen2, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads/Writes 5000 MB/s / 3200 MB/s, TBW: 300TB, MTBF: 2mln hours, 3D NAND TLC, heat-dissipating thermal padM.2 NVMe SSD 1.0TB GOODRAM PX600 Gen2, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads/Writes 5000 MB/s / 3200 MB/s, TBW: 300TB, MTBF: 2mln hours, 3D NAND TLC, heat-dissipating thermal pad Объём накопителя: 1000 ГБ Тип ячеек памяти 3D NAND TLC Максимальная скорость записи, мб/с 3200 Ма
- M.2 NVMe SSD 2.0TB GOODRAM PX600 Gen2, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads/Writes 5000 MB/s / 4200 MB/s, TBW: 600TB, MTBF: 2mln hours, 3D NAND TLC, heat-dissipating thermal padM.2 NVMe SSD 2.0TB GOODRAM PX600 Gen2, Interface: PCIe4.0 x4 / NVMe1.4, M2 Type 2280 form factor, Sequential Reads/Writes 5000 MB/s / 4200 MB/s, TBW: 600TB, MTBF: 2mln hours, 3D NAND TLC, heat-dissipating thermal pad Объём накопителя: 2000 ГБ Тип ячеек памяти 3D NAND TLC Максимальная скорость записи, мб/с 4200 Ма
