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(61)- 2.5" SSD 2.0TB Kingston KC600, SATAIII,SeqReads:550 MB/s, SeqWrites:520 MB/s, Max Random 4k Read:90000 IOPS/ Write: 80000 IOPS,7mm, Controller SM2259, XTS-AES 256-bit encryption, 3D NAND TLC2.5" SSD 2.0TB Kingston KC600, SATAIII,SeqReads:550 MB/s, SeqWrites:520 MB/s, Max Random 4k Read:90000 IOPS/ Write: 80000 IOPS,7mm, Controller SM2259, XTS-AES 256-bit encryption, 3D NAND TLC Категория SSD Производитель KINGSTON Форм-фактор 2.5" Part Number SKC600/2048G Модель KC600 Емкость накопителя 2 ТБ Скорость ч
- 2.5" SSD 120GB Patriot Burst Elite, SATAIII, Sequential Read: 450MB/s, Sequential Write: 320MB/s, 4K Random Read: 40K IOPS, 4K Random Write: 40K IOPS, SMART ZIP, TRIM, 7mm, TBW: up to 50TB, Phison S11 Controller, 3D NAND TLC2.5" SSD 120GB Patriot Burst Elite, SATAIII, Sequential Read: 450MB/s, Sequential Write: 320MB/s, 4K Random Read: 40K IOPS, 4K Random Write: 40K IOPS, SMART ZIP, TRIM, 7mm, TBW: up to 50TB, Phison S11 Controller, 3D NAND TLC Объём накопителя 120 ГБ Тип ячеек памяти 3D NAND TLC Максимальная скорость записи, мб/с
- M.2 SATA SSD 256GB Verbatim Vi560 S3, SATA 6Gb/s, M.2 Type 2280 form factor, Sequential Reads: 560 MB/s, Sequential Writes: 460 MB/s, Max Random 4k: Read: 102,000 IOPS / Write: 80,000 IOPS, Phison Controller, 3D NAND TLCM.2 SATA SSD 256GB Verbatim Vi560 S3, SATA 6Gb/s, M.2 Type 2280 form factor, Sequential Reads: 560 MB/s, Sequential Writes: 460 MB/s, Max Random 4k: Read: 102,000 IOPS / Write: 80,000 IOPS, Phison Controller, 3D NAND TLC Форм-фактор: M.2 2280 Основной интерфейс: интерфейс Serial ATA со скоростью передачи данных 6 Гб
- 2.5" SSD 240GB GOODRAM CL100 Gen.3, SATAIII, Sequential Reads: 520 MB/s, Sequential Writes: 400 MB/s, Thickness- 7mm, Controller Marvell 88NV1120, 3D NAND TLC2.5" SSD 240GB GOODRAM CL100 Gen.3, SATAIII, Sequential Reads: 520 MB/s, Sequential Writes: 400 MB/s, Thickness- 7mm, Controller Marvell 88NV1120, 3D NAND TLC Категория SSD Производитель GOODRAM Форм-фактор 2.5" Емкость накопителя 240 GB Скорость чтения 520 MB/s Скорость записи 400 MB/s Тип ячеек памяти TLC Контролл
- 2.5" SSD 256GB Verbatim VI550 S3, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 460 MB/s, Maximum Random 4k: Read: 65,000 IOPS / Write: 85,000 IOPS, Thickness- 7mm, Controller Phison PS3111, 3D NAND TLC2.5" SSD 256GB Verbatim VI550 S3, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 460 MB/s, Maximum Random 4k: Read: 65,000 IOPS / Write: 85,000 IOPS, Thickness- 7mm, Controller Phison PS3111, 3D NAND TLC Производитель изделия Verbatim Модель 2.5" SSD 256GB Verbatim VI550 S3 Архитектура жесткого диска NAND
- 2,5" SSD 256GB Patriot P220, SATAIII, Sequential Read: 550MB/s, Sequential Write: 490MB/s, 4K Random Read: 40K IOPS, 4K Random Write: 50K IOPS, SMART, TRIM, 7mm, TBW: 120TB, Phison S12 Controller, 3D NAND TLC2,5" SSD 256GB Patriot P220, SATAIII, Sequential Read: 550MB/s, Sequential Write: 490MB/s, 4K Random Read: 40K IOPS, 4K Random Write: 50K IOPS, SMART, TRIM, 7mm, TBW: 120TB, Phison S12 Controller, 3D NAND TLC Объём накопителя 256 ГБ Тип ячеек памяти 3D NAND TLC Максимальная скорость записи, мб/с 490 Максимальная
- 2.5" SSD 256GB Silicon Power Ace A58, SATAIII, SeqReads: 560 MB/s, SeqWrites: 530 MB/s, Controller Phison S11, MTBF 1.5mln, SLC Cash, BBM, Internal Auto-Copy Technology, SP Toolbox, 7mm, 3D NAND TLC2.5" SSD 256GB Silicon Power Ace A58, SATAIII, SeqReads: 560 MB/s, SeqWrites: 530 MB/s, Controller Phison S11, MTBF 1.5mln, SLC Cash, BBM, Internal Auto-Copy Technology, SP Toolbox, 7mm, 3D NAND TLC Объем 256 ГБ Страна-производитель Китай (Тайвань) Скорость чтения 510 МБ/с Скорость записи 480 МБ/с Форм-фактор 2.5"
- 2.5" SSD 256GB GOODRAM CX400 Gen.2, SATAIII, Sequential Reads: 550 MB/s, Sequential Writes: 480 MB/s, Maximum Random 4k: Read: 65,000 IOPS / Write: 61,440 IOPS, Thickness- 7mm, Controller Phison PS3111-S11, 3D NAND TLC2.5" SSD 256GB GOODRAM CX400 Gen.2, SATAIII, Sequential Reads: 550 MB/s, Sequential Writes: 480 MB/s, Maximum Random 4k: Read: 65,000 IOPS / Write: 61,440 IOPS, Thickness- 7mm, Controller Phison PS3111-S11, 3D NAND TLC Объем 256 ГБ Формфактор 2.5" Интерфейс SATAIII
- 2,5" SSD 256GB Patriot P210, SATAIII, Sequential Read: 500MB/s, Sequential Write: 400MB/s, 4K Random Read: 50K IOPS, 4K Random Write: 30K IOPS, SMART, TRIM, 7mm, TBW: 120TB, SMI 2259XT Controller, 3D NAND TLC2,5" SSD 256GB Patriot P210, SATAIII, Sequential Read: 500MB/s, Sequential Write: 400MB/s, 4K Random Read: 50K IOPS, 4K Random Write: 30K IOPS, SMART, TRIM, 7mm, TBW: 120TB, SMI 2259XT Controller, 3D NAND TLC Объём накопителя 256 ГБ Тип ячеек памяти 3D NAND TLC Максимальная скорость записи, мб/с 5546 Максимальная
- M.2 NVMe SSD 256GB GOODRAM PX500 Gen.2, PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 1850 MB/s, Write: 950 MB/s, Controller SMI 2263XT, 3D NAND Flash SSDPR-PX500-256-80M.2 NVMe SSD 256GB GOODRAM PX500 Gen.2, PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 1850 MB/s, Write: 950 MB/s, Controller SMI 2263XT, 3D NAND Flash SSDPR-PX500-256-80 Объем (ГБ) 256 Интерфейс PCIe3.0 x4 / NVMe1.3 Скорость чтения (МБ/с) 1850 Скорость записи (МБ/с) 950 Время наработки на отказ (ч) 1500000 Форм-фактор
- M.2 NVMe SSD 250GB Kingston NV2, Interface: PCIe4.0 x4 / NVMe1.3, M2 Type 2280 form factor, Sequential Reads 3000 MB/s, Sequential Writes 1300 MB/s, Phison E19T controller, TBW: 80TB, 3D QLC NAND flashM.2 NVMe SSD 250GB Kingston NV2, Interface: PCIe4.0 x4 / NVMe1.3, M2 Type 2280 form factor, Sequential Reads 3000 MB/s, Sequential Writes 1300 MB/s, Phison E19T controller, TBW: 80TB, 3D QLC NAND flash Объём накопителя 250 ГБ Тип ячеек памяти QLC 3D NAND Максимальная скорость записи, мб/с 1300 Максимальная скорос
- 2.5" SSD 240GB Kingston A400, SATAIII, Sequential Reads:500 MB/s, Sequential Writes:350 MB/s, 7mm, Controller 2 Channel, NAND TLC2.5" SSD 240GB Kingston A400, SATAIII, Sequential Reads:500 MB/s, Sequential Writes:350 MB/s, 7mm, Controller 2 Channel, NAND TLC Твердотельный накопитель Kingston A400 значительно повышает скорость работы системы, обеспечивая более высокую скорость запуска, загрузки и передачи данных по сравнению с механическими же
- M.2 NVMe SSD 512GB GOODRAM PX500 Gen.2, PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 2000 MB/s, Write: 1600MB/s, Controller SMI 2263XT, 3D NAND Flash SSDPR-PX500-512-80M.2 NVMe SSD 512GB GOODRAM PX500 Gen.2, PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 2000 MB/s, Write: 1600MB/s, Controller SMI 2263XT, 3D NAND Flash SSDPR-PX500-512-80 Бренд GOODRAM Модель PX500 Форм-фактор накопителя M.2 NVMe Память накопителя 512 ГБ Тип чипов 3D-NAND TLC Скорость чтения 2000 МБ/с Скорость записи 16
- 2.5" SSD 512GB GOODRAM CX400, SATAIII, Sequential Reads: 550 MB/s, Sequential Writes: 490 MB/s, Maximum Random 4k: Read: 77,500 IOPS / Write: 85,000 IOPS, Thickness- 7mm, Controller Phison PS3111-S11, 3D NAND TLC2.5" SSD 512GB GOODRAM CX400, SATAIII, Sequential Reads: 550 MB/s, Sequential Writes: 490 MB/s, Maximum Random 4k: Read: 77,500 IOPS / Write: 85,000 IOPS, Thickness- 7mm, Controller Phison PS3111-S11, 3D NAND TLC Ваш старый ПК теперь как новый Скоростной флеш-накопитель на основе технологии 3D TLC и контроллер Phiso
- M.2 NVMe SSD 256GB ADATA XPG SX8200 PRO, PCIe3.0 x4 / NVMe1.3, M2 Type 2280 , Read: 3500 MB/s, Write: 3000 MB/s, Controller SMI, 3D NAND TLC, ASX8200PNP-256GT-CM.2 NVMe SSD 256GB ADATA XPG SX8200 PRO, PCIe3.0 x4 / NVMe1.3, M2 Type 2280 , Read: 3500 MB/s, Write: 3000 MB/s, Controller SMI, 3D NAND TLC, ASX8200PNP-256GT-C Твердотельный накопитель SX8200 Pro M.2 2280 — на сегодняшний день самый скоростной из твердотельных накопителей XPG, предназначенный для любителей ПК, гей
- M.2 NVMe SSD 250GB Samsung 980 , PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 3500 MB/s, Write: 2300 MB/s, Read /Write: 250,000/550,000 IOPS, Controller Samsung Phoenix, 3D TLC (V-NAND)M.2 NVMe SSD 250GB Samsung 980 , PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 3500 MB/s, Write: 2300 MB/s, Read /Write: 250,000/550,000 IOPS, Controller Samsung Phoenix, 3D TLC (V-NAND) Объём накопителя 256 ГБ Тип ячеек памяти TLC
- M.2 SATA SSD 512GB Verbatim Vi560 S3, SATA 6Gb/s, M.2 Type 2280 form factor, Sequential Reads: 560 MB/s, Sequential Writes: 520 MB/s, Max Random 4k: Read: 101,376 IOPS / Write: 80,400 IOPS, Phison Controller, 3D NAND TLCM.2 SATA SSD 512GB Verbatim Vi560 S3, SATA 6Gb/s, M.2 Type 2280 form factor, Sequential Reads: 560 MB/s, Sequential Writes: 520 MB/s, Max Random 4k: Read: 101,376 IOPS / Write: 80,400 IOPS, Phison Controller, 3D NAND TLC Объём накопителя 512 ГБ Тип ячеек памяти 3D NAND TLC
- 2.5" SSD 480GB Patriot Burst Elite, SATAIII, Sequential Read: 450MB/s, Sequential Write: 320MB/s, 4K Random Read: 40K IOPS, 4K Random Write: 40K IOPS, SMART ZIP, TRIM, 7mm, TBW: up to 200TB, Phison S11 Controller, 3D NAND TLC2.5" SSD 480GB Patriot Burst Elite, SATAIII, Sequential Read: 450MB/s, Sequential Write: 320MB/s, 4K Random Read: 40K IOPS, 4K Random Write: 40K IOPS, SMART ZIP, TRIM, 7mm, TBW: up to 200TB, Phison S11 Controller, 3D NAND TLC Объём накопителя 480 ГБ Тип ячеек памяти 3D NAND TLC Максимальная скорость записи, мб/с
- 2.5" SSD 480GB GOODRAM CL100 Gen.3, SATAIII, Sequential Reads: 540 MB/s, Sequential Writes: 460 MB/s, Thickness- 7mm, Controller Marvell 88NV1120, 3D NAND TLC2.5" SSD 480GB GOODRAM CL100 Gen.3, SATAIII, Sequential Reads: 540 MB/s, Sequential Writes: 460 MB/s, Thickness- 7mm, Controller Marvell 88NV1120, 3D NAND TLC Объём накопителя, ГБ 480 Максимальная скорость записи, Мбайт/с 460 Максимальная скорость чтения, Мбайт/с 540
- 2.5" SSD 512GB Verbatim VI550 S3, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 535 MB/s, Maximum Random 4k: Read: 75,000 IOPS / Write: 86,000 IOPS, Thickness- 7mm, Controller Phison PS3111, 3D NAND TLC2.5" SSD 512GB Verbatim VI550 S3, SATAIII, Sequential Reads: 560 MB/s, Sequential Writes: 535 MB/s, Maximum Random 4k: Read: 75,000 IOPS / Write: 86,000 IOPS, Thickness- 7mm, Controller Phison PS3111, 3D NAND TLC Внутренний 7-мм твердотельный накопитель 2,5'' SATA III Высокая надежность за счет превосходного флэш-ко
- M.2 NVMe SSD 500GB Kingston NV2, Interface: PCIe4.0 x4 / NVMe1.3, M2 Type 2280 form factor, Sequential Reads 3500 MB/s, Sequential Writes 2100 MB/s, Phison E19T controller, TBW: 160TB, 3D QLC NAND flashM.2 NVMe SSD 500GB Kingston NV2, Interface: PCIe4.0 x4 / NVMe1.3, M2 Type 2280 form factor, Sequential Reads 3500 MB/s, Sequential Writes 2100 MB/s, Phison E19T controller, TBW: 160TB, 3D QLC NAND flash Объём накопителя 500 ГБ Тип ячеек памяти QLC 3D NAND Максимальная скорость записи, мб/с 2100 Максимальная скоро
- 2,5" SSD 512GB Patriot P210, SATAIII, Sequential Read: 520MB/s, Sequential Write: 430MB/s, 4K Random Read: 50K IOPS, 4K Random Write: 50K IOPS, SMART, TRIM, 7mm, TBW: 240TB, SMI 2259XT Controller, 3D NAND TLC2,5" SSD 512GB Patriot P210, SATAIII, Sequential Read: 520MB/s, Sequential Write: 430MB/s, 4K Random Read: 50K IOPS, 4K Random Write: 50K IOPS, SMART, TRIM, 7mm, TBW: 240TB, SMI 2259XT Controller, 3D NAND TLC Объём накопителя 512 ГБ Тип ячеек памяти 3D NAND TLC Максимальная скорость записи, мб/с 430 Максимальная
- 2.5" SSD 512GB GOODRAM CX400 Gen.2, SATAIII, Sequential Reads: 550 MB/s, Sequential Writes: 500 MB/s, Maximum Random 4k: Read: 75,500 IOPS / Write: 76,800 IOPS, Thickness- 7mm, Controller Phison PS3111-S11, 3D NAND TLC2.5" SSD 512GB GOODRAM CX400 Gen.2, SATAIII, Sequential Reads: 550 MB/s, Sequential Writes: 500 MB/s, Maximum Random 4k: Read: 75,500 IOPS / Write: 76,800 IOPS, Thickness- 7mm, Controller Phison PS3111-S11, 3D NAND TLC Объем 512 ГБ Скорость чтения 550 МБ/с Скорость записи 500 МБ/с Энергопотребление В режиме чтения:
- M.2 NVMe SSD 250GB Samsung 970 EVO Plus, PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 3500 MB/s, Write: 2300 MB/s, Read /Write: 250,000/550,000 IOPS, Controller Samsung Phoenix, 3D TLC (V-NAND)M.2 NVMe SSD 250GB Samsung 970 EVO Plus, PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 3500 MB/s, Write: 2300 MB/s, Read /Write: 250,000/550,000 IOPS, Controller Samsung Phoenix, 3D TLC (V-NAND) Объём накопителя, ГБ 250 Максимальная скорость записи, Мбайт/с 2300 Максимальная скорость чтения, Мбайт/с 3500
- 2,5" SSD 512GB Patriot P220, SATAIII, Sequential Read: 550MB/s, Sequential Write: 500MB/s, 4K Random Read: 40K IOPS, 4K Random Write: 50K IOPS, SMART, TRIM, 7mm, TBW: 240TB, Phison S12 Controller, 3D NAND TLC2,5" SSD 512GB Patriot P220, SATAIII, Sequential Read: 550MB/s, Sequential Write: 500MB/s, 4K Random Read: 40K IOPS, 4K Random Write: 50K IOPS, SMART, TRIM, 7mm, TBW: 240TB, Phison S12 Controller, 3D NAND TLC Объём накопителя 512 ГБ Тип ячеек памяти 3D NAND TLC Максимальная скорость записи, мб/с 500 Максимальная
- 2.5" SSD 480GB KIOXIA (Toshiba) Exceria, SATAIII, SeqReads: 555 MB/s, SeqWrites: 540 MB/s, Read / Write Speed: 82000 IOPS / 88000 IOPS, 7mm, Controller SMI SM2258XT, BiCS Flash TLC2.5" SSD 480GB KIOXIA (Toshiba) Exceria, SATAIII, SeqReads: 555 MB/s, SeqWrites: 540 MB/s, Read / Write Speed: 82000 IOPS / 88000 IOPS, 7mm, Controller SMI SM2258XT, BiCS Flash TLC
- M.2 NVMe SSD 500GB Samsung 980 , PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 3500 MB/s, Write: 2300 MB/s, Read /Write: 250,000/550,000 IOPS, Controller Samsung Phoenix, 3D TLC (V-NAND)M.2 NVMe SSD 500GB Samsung 980 , PCIe3.0 x4 / NVMe1.3, M2 Type 2280, Read: 3500 MB/s, Write: 2300 MB/s, Read /Write: 250,000/550,000 IOPS, Controller Samsung Phoenix, 3D TLC (V-NAND) форм-фактор: 2280, M емкость: 500 ГБ скорость чтения/записи: 3100 МБ/с / 2600 МБ/с интерфейс подключения: M.2, PCI-E 3.0 x4 тип флэш-п
- mSATA SSD 512GB Kingston KC600, SATAIII,SeqReads:550 MB/s,SeqWrites:500 MB/s, Max Random 4k Read: 90000 IOPS/ Write: 80000 IOPS, 7mm, Controller SM2259, XTS-AES 256-bit encryption, 3D NAND TLCmSATA SSD 512GB Kingston KC600, SATAIII,SeqReads:550 MB/s,SeqWrites:500 MB/s, Max Random 4k Read: 90000 IOPS/ Write: 80000 IOPS, 7mm, Controller SM2259, XTS-AES 256-bit encryption, 3D NAND TLC Производитель: Kingston линейка: KC600 Тип: SSD накопитель Объем, ГБ: 512 интерфейс: mSATA Тип флэш-памяти NAND: 3D TLC конт
- M.2 NVMe SSD 500GB Samsung SSD 980, PCIe3.0 x4 / NVMe1.4, M2 Type 2280 form factor, Seq. Read: 3100 MB/s, Seq. Write: 2600 MB/s, Max Random 4k: Read /Write: 400K/470K IOPS, Samsung Pablo Controller, 512MB LPDDR4, V-NAND 3-bit MLCM.2 NVMe SSD 500GB Samsung SSD 980, PCIe3.0 x4 / NVMe1.4, M2 Type 2280 form factor, Seq. Read: 3100 MB/s, Seq. Write: 2600 MB/s, Max Random 4k: Read /Write: 400K/470K IOPS, Samsung Pablo Controller, 512MB LPDDR4, V-NAND 3-bit MLC
- 2.5" SSD 1.0TB GOODRAM CX400 Gen.2, SATAIII, Read: 550 MB/s, Write: 500 MB/s, 7mm, Controller Phison PS3111-S11, 3D NAND TLC SSDPR-CX400-01T-G22.5" SSD 1.0TB GOODRAM CX400 Gen.2, SATAIII, Read: 550 MB/s, Write: 500 MB/s, 7mm, Controller Phison PS3111-S11, 3D NAND TLC SSDPR-CX400-01T-G2 Объём накопителя 1 ТБ Тип ячеек памяти 3D NAND TLC
